SI4434DY-T1-E3 Vishay, SI4434DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4434DY-T1-E3
• Description: MOSFET N-CH 250V 2.1A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4434DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.155 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 162mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4434DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72562
S09-0322-Rev. D, 02-Mar-09
0.30
0.24
0.18
0.12
0.06
0.00
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
V
8
GS
7
V
DS
= 6 V
Q
- Source-to-Drain Voltage (V)
g
T
0.4
I
- Total Gate Charge (nC)
D
J
= 150 °C
- Drain Current (A)
Gate Charge
16
14
0.6
24
21
0.8
V
GS
T
32
28
J
= 10 V
1.0
= 25 °C
1.2
40
35
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 3.0 A
= 10 V
50
2
V
V
T
DS
0
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
100
4
C
50
C
C
Vishay Siliconix
oss
iss
rss
150
I
D
6
75
= 3.0 A
Si4434DY
100
www.vishay.com
200
8
125
150
250
10
3