IRFD9210 Vishay, IRFD9210 Datasheet - Page 2

• Manufacturer Part Number: IRFD9210
• Description: MOSFET P-CH 200V 400MA 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9210

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -400mA
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9210

IRFD9210, SiHFD9210
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
t
t
R
I
I
C
V
C
V
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
DS
L
SM
I
t
t
thJA
DS
oss
t
SD
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
V
J
GS
GS
T
DS
= 25 °C, I
J
Reference to 25 °C, I
= - 10 V
= - 10 V
= 25 °C, I
= - 160 V, V
V
V
V
V
V
TYP.
DD
DS
TEST CONDITIONS
DS
f = 1.0 MHz, see fig. 5
R
DS
GS
-
g
= - 50 V, I
= - 100 V, I
= - 200 V, V
F
= V
= 24 , R
= 0 V, I
V
V
= - 2.3 A, dI/dt = 100 A/µs
see fig. 10
S
V
GS
DS
GS
I
= - 0.40 A, V
GS
D
GS
= - 25 V,
= - 1.3 A, V
, I
= ± 20 V
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
D
= - 250 µA
I
= - 250 µA
D
D
D
= - 0.24 A
= 41
= - 0.24 A
GS
= - 2.3 A
D
b
= - 1 mA
= 0 V
J
DS
G
GS
G
= 125 °C
= - 160 V
= 0 V
b
MAX.
D
S
120
b
D
S
b
b
- 200
MIN.
- 2.0
0.27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2464-Rev. C, 25-Oct-10
Document Number: 91140
- 0.23
TYP.
0.56
170
110
8.0
4.0
6.0
54
16
12
11
13
-
-
-
-
-
-
-
-
-
-
-
-
-
°C/W
UNIT
± 100
- 0.40
MAX.
- 100
- 500
- 4.0
- 3.2
- 5.8
220
3.0
8.9
2.1
3.9
1.1
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V

S
A
V