IRFD9210 Vishay, IRFD9210 Datasheet - Page 5

• Manufacturer Part Number: IRFD9210
• Description: MOSFET P-CH 200V 400MA 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9210

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -400mA
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9210

Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Vary t
required I
Fig. 12a - Unclamped Inductive Test Circuit
p
to obtain
AS
T
A
R
- 10 V
, Ambient Temperature (°C)
g
V
DS
t
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
p
I
AS
D.U.T.
0.01 W
L
+
-
V
DD
t
t
1
1
, Rectangular Pulse Duration (s)
, Rectangular Pulse Duration (s)
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
IRFD9210, SiHFD9210
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
R
Vishay Siliconix
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
V
DD
DD
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