IRFD9210 Vishay, IRFD9210 Datasheet - Page 3

• Manufacturer Part Number: IRFD9210
• Description: MOSFET P-CH 200V 400MA 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9210

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 240mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -400mA
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9210

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91140
S10-2464-Rev. C, 25-Oct-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
T
T
A
A
= 25 °C
= 150 °C
A
A
= 150 °C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 3 - Typical Transfer Characteristics
IRFD9210, SiHFD9210
Vishay Siliconix
www.vishay.com
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