MOSFET N-CH 1000V 3.1A TO-220AB

IRFBG30

Manufacturer Part NumberIRFBG30
DescriptionMOSFET N-CH 1000V 3.1A TO-220AB
ManufacturerVishay
IRFBG30 datasheet
 


Specifications of IRFBG30

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id3.1ADrain Source Voltage Vds1kV
On Resistance Rds(on)5ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBG30  
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IRFBG30, SiHFBG30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
= 25 °C, unless otherwise noted)
J
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient
DS
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
TYP.
R
-
thJA
R
0.50
thCS
R
-
thJC
SYMBOL
TEST CONDITIONS
V
V
= 0 V, I
= 250 μA
DS
GS
D
ΔV
/T
Reference to 25 °C, I
= 1 mA
DS
J
D
V
V
= V
, I
= 250 μA
GS(th)
DS
GS
D
I
V
= ± 20 V
GSS
GS
V
= 1000 V, V
= 0 V
DS
GS
I
DSS
V
= 800 V, V
= 0 V, T
DS
GS
J
R
V
= 10 V
I
= 1.9 A
DS(on)
GS
D
g
V
= 10 V, I
= 1.9 A
fs
DS
D
V
= 0 V,
C
GS
iss
C
V
= 25 V,
oss
DS
C
f = 1.0 MHz, see fig. 5
rss
Q
g
I
= 3.1 A, V
D
Q
V
= 10 V
gs
GS
see fig. 6 and 13
Q
gd
t
d(on)
t
V
= 500 V, I
= 3.1 A
r
DD
D
t
= 12 Ω, R
= 170 Ω, see fig. 10
d(off)
R
g
D
t
f
Between lead,
L
D
6 mm (0.25") from
package and center of
L
S
die contact
MOSFET symbol
I
S
showing the
integral reverse
I
SM
p - n junction diode
V
T
= 25 °C, I
= 3.1 A, V
SD
J
S
GS
t
rr
T
= 25 °C, I
= 3.1 A, dI/dt = 100 A/μs
J
F
Q
rr
t
Intrinsic turn-on time is negligible (turn-on is dominated by L
on
This datasheet is subject to change without notice.
MAX.
UNIT
62
-
°C/W
1.0
MIN.
TYP.
MAX.
UNIT
1000
-
-
-
1.4
-
V/°C
2.0
-
4.0
-
-
± 100
nA
-
-
100
μA
= 125 °C
-
-
500
b
-
-
5.0
b
2.1
-
-
-
980
-
-
140
-
pF
-
50
-
-
-
80
=400 V,
DS
-
-
10
nC
b
-
-
42
-
12
-
-
25
-
ns
-
89
-
b
-
29
-
D
-
4.5
-
nH
G
-
7.5
-
S
-
-
3.1
D
G
-
-
12
S
-
-
b
= 0 V
1.8
-
410
620
ns
b
-
1.3
2.0
μC
and L
)
S
D
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
V
V
Ω
S
A
V