IRFBG30 Vishay, IRFBG30 Datasheet - Page 2

• Manufacturer Part Number: IRFBG30
• Description: MOSFET N-CH 1000V 3.1A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBG30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 980pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.1A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBG30

IRFBG30, SiHFBG30
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
t
t
R
R
C
I
I
C
C
V
GS(th)
DS(on)
Q
Q
V
d(on)
d(off)
I
GSS
DSS
g
Q
Q
DS
L
L
t
SM
I
t
thCS
thJC
t
t
thJA
DS
oss
SD
on
rss
S
iss
gd
rr
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
V
V
V
R
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
GS
GS
T
g
J
Reference to 25 °C, I
= 12 Ω, R
= 800 V, V
= 25 °C, I
= 10 V
= 10 V
V
V
V
V
TYP.
V
f = 1.0 MHz, see fig. 5
0.50
TEST CONDITIONS
DS
DD
DS
DS
GS
-
-
= 1000 V, V
F
= V
= 500 V, I
= 10 V, I
= 0 V, I
V
= 3.1 A, dI/dt = 100 A/μs
V
V
GS
D
DS
S
GS
GS
GS
= 170 Ω, see fig. 10
= 3.1 A, V
I
= ± 20 V
D
, I
= 25 V,
= 0 V,
= 0 V, T
= 3.1 A, V
D
see fig. 6 and 13
D
D
= 250 μA
= 250 μA
D
= 1.9 A
GS
I
= 3.1 A
D
D
= 1.9 A
= 0 V
GS
J
= 1 mA
G
G
= 125 °C
DS
b
= 0 V
=400 V,
b
MAX.
D
S
b
D
S
1.0
62
b
b
-
b
MIN.
1000
2.0
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0517-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91124
TYP.
980
140
410
1.4
4.5
7.5
1.3
50
12
25
89
29
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
100
500
620
4.0
5.0
3.1
1.8
2.0
S
80
10
42
12
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
μA
nC
nH
μC
pF
ns
ns
Ω
V
V
S
A
V