MOSFET N-CH 1000V 3.1A TO-220AB

IRFBG30

Manufacturer Part NumberIRFBG30
DescriptionMOSFET N-CH 1000V 3.1A TO-220AB
ManufacturerVishay
IRFBG30 datasheet
 


Specifications of IRFBG30

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityN Channel
Continuous Drain Current Id3.1ADrain Source Voltage Vds1kV
On Resistance Rds(on)5ohmRds(on) Test Voltage Vgs10V
Threshold Voltage Vgs Typ4VLead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFBG30  
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Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
Fig. 10b - Switching Time Waveforms
This datasheet is subject to change without notice.
IRFBG30, SiHFBG30
Vishay Siliconix
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
t
t
t
t
d(on)
r
d(off)
f
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www.vishay.com/doc?91000
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