APT5010B2VFRG Microsemi Power Products Group, APT5010B2VFRG Datasheet - Page 3

• Manufacturer Part Number: APT5010B2VFRG
• Description: MOSFET N-CH 500V 47A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT5010B2VFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 470nC @ 10V
• Input Capacitance (ciss) @ Vds: 8900pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
100
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT5010B2VFR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250 SEC. PULSE TEST
V
GS
J
V GS =7V, 8V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
50
50
C
= 10V
T J = +125 C
D
, CASE TEMPERATURE ( C)
T J = +25 C
[Cont.]
2
0
100
25
T J = +125 C
75
T J = +25 C
T J = -55 C
50
4
150
100
4.5V
75
5.5V
T J = -55 C
100 125 150
4V
5V
6V
6
200
125
150
250
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V
V GS =7V, 8V & 10V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
20
= 10V @ 0.5 I
NORMALIZED TO
, JUNCTION TEMPERATURE ( C)
2
T
, DRAIN CURRENT (AMPERES)
V GS =10V
C
, CASE TEMPERATURE ( C)
0
0
40
4
DS
25
25
(ON) vs DRAIN CURRENT
D
[Cont.]
V GS =15V
60
50
50
6
75
75 100 125 150
80
8
V GS =20V
100 125 150
100
5.5V
4.5V
10
4V
5V
6V
120
12