APT8014L2FLLG Microsemi Power Products Group, APT8014L2FLLG Datasheet - Page 2

• Manufacturer Part Number: APT8014L2FLLG
• Description: MOSFET N-CH 800V 52A TO-264MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT8014L2FLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 285nC @ 10V
• Input Capacitance (ciss) @ Vds: 7238pF @ 25V
• Power - Max: 893W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
dv
I
C
t
t
V
C
C
Q
RRM
Q
Q
E
E
I
d(on)
d(off)
E
E
SM
t
Q
I
θJC
θJA
S
SD
rr
oss
t
t
/
iss
rss
on
off
on
off
gs
gd
r
rr
f
dt
g
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
-5
= -52A,
= -52A,
= -52A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -52A)
-3
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
dv
device itself.
DD
I
I
D
D
I
I
D
D
/
= 533V, V
dt
= 52A, R
= 52A, R
= 533V V
V
V
= 52A @ 25°C
= 52A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
DS
GS
GS
G
GS
j
j
j
j
j
j
= 0.6Ω
10
= 400V
= 400V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
-2
j
= +25°C, L = 2.37mH, R
G
G
GS
GS
= 3Ω
= 3Ω
= 15V
I
= 15V
S
≤
-
I
D
52A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D =
10
≤ 700A/µs
-1
t 1
G
= 25Ω, Peak I
t 2
7238
1402
1091
1135
1662
1383
TYP
TYP
TYP
248
285
170
2.0
30
20
19
69
15
13
15
30
t 1
V
/ t 2
R
APT8014L2FLL(G)
≤ 800V
MAX
1100
MAX
MAX
208
440
0.14
1.3
L
52
18
40
1.0
= 52A
T
J
≤ 150
Amps
Amps
UNIT
Volts
V/ns
UNIT
UNIT
°C/W
µC
ns
nC
pF
ns
µ
°
J
C