IRF7524D1GTRPBF International Rectifier, IRF7524D1GTRPBF Datasheet

IRF7524D1GTRPBF

Manufacturer Part Number

IRF7524D1GTRPBF

Description

MOSFET P-CH 20V 1.8A MICRO8

Manufacturer

International Rectifier

Series

FETKY™r

Datasheet

1.IRF7524D1GTRPBF.pdf (8 pages)

Specifications of IRF7524D1GTRPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Diode (Isolated)

Rds On (max) @ Id, Vgs

270 mOhm @ 1.2A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

700mV @ 250µA

Gate Charge (qg) @ Vgs

8.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

240pF @ 15V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

8-MicroSMD

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

270 mOhms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

12 V

Continuous Drain Current

- 1.7 A

Power Dissipation

1.25 W

Gate Charge Qg

5.4 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7524D1GTRPBFTR

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Description

Absolute Maximum Ratings

Thermal Resistance Ratings

Notes:

‚

„

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

www.irf.com

Parameter

dv/dt

θJA

Co-packaged HEXFET® Power

MOSFET and Schottky Diode

P-Channel HEXFET

Generation 5 Technology

Micro8

Lead-Free

Halogen-Free

Pulse width ≤ 300µs – duty cycle ≤ 2%

Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)

Low V

@ T

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

STG

≤ -1.2A, di/dt ≤ 100A/µs, V

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

package, with half the footprint area of the standard SO-8, provides

Parameter

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

≤ V

(BR)DSS

, T

≤ 150°C

„

‚

@ -4.5V

FETKY MOSFET & Schottky Diode

IRF7524D1GPbF

Top View

an ideal

-55 to +150

Maximum

1.25

± 12

-1.7

-1.4

-5.0

-14

0.8

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

= -20V

= 0.27Ω

Units

mW/°C

°C/W

Units

V/ns

°C

09/16/08

Related parts for IRF7524D1GTRPBF

IRF7524D1GTRPBF Summary of contents

Page 1

... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...

Page 2

... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions -20 ––– ––– V ...

Page 3

VGS TOP -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V 1 0.1 -1.50V 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ...

Page 4

IRF7524D1GPbF 500 1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss 100 ...

Page 5

D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.0 0.8 0.6 VGS = -2.5V 0.4 VGS = -5.0V 0.2 0.0 0.0 ...

Page 6

IRF7524D1GPbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ...

Page 7

Micro8 Package Outline Micro8 Part Marking Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com Dimensions are shown in milimeters (inches) @Y6HQG@)ÃUCDTÃDTÃ6IÃDSA&$!# GPUÃ8P9@ÃYY 96U@Ã8P9@Ã`XÃÃT@@ÃU6 G@ `Ã2Ã`@6S XÃ2ÃX@@F QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G Q6SUÃIVH @S BÃ2Ã9@TDBI6U@TÃC6GPB@IÃÃAS@@ XXÃ2Ã ...

Page 8

IRF7524D1GPbF TM 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: ...

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