IRF7524D1PBF International Rectifier, IRF7524D1PBF Datasheet

MOSFET P-CH 20V 1.7A MICRO-8

IRF7524D1PBF

Manufacturer Part Number
IRF7524D1PBF
Description
MOSFET P-CH 20V 1.7A MICRO-8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheets

Specifications of IRF7524D1PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
240pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Transistor Polarity
P Channel
Continuous Drain Current Id
-1.7A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
-4.5V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
Notes:

ƒ
l
l
l
l
l
l
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
www.irf.com
Parameter
R
I
I
I
P
P
V
dv/dt
T
D
D
DM
θJA
D
D
GS
J,
Pulse width ≤ 300µs – duty cycle ≤ 2%
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
Co-packaged HEXFET® Power
MOSFET and Schottky Diode
P-Channel HEXFET
Generation 5 Technology
Micro8
Lead-Free
@ T
@ T
SD
Low V
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
T
@T
@T
STG
≤ -1.2A, di/dt ≤ 100A/µs, V
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
TM
Schottky Rectifier
Footprint
TM
family of co-packaged HEXFETs and Schottky diodes offer the
package, with half the footprint area of the standard SO-8, provides
Parameter
Continuous Drain Current, V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
TM
Junction-to-Ambient
DD
will allow it to fit easily into extremely thin application
≤ V
(BR)DSS
, T
J
≤ 150°C
Ã
GS
A
S
G
A
@ -4.5V
FETKY MOSFET & Schottky Diode
1
2
3
4
Top View
IRF7524D1PbF
TM
TM
an ideal
8
7
6
5
-55 to +150
Maximum
Maximum
K
1.25
± 12
K
D
D
-1.7
-1.4
-5.0
-14
0.8
10
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
= -20V
= 0.27Ω
TM
Units
mW/°C
°C/W
Units
V/ns
W
°C
A
V
1
5/12/04

Related parts for IRF7524D1PBF

IRF7524D1PBF Summary of contents

Page 1

... V ≤ ƒ Pulse width ≤ 300µs – duty cycle ≤ 2% „ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com IRF7524D1PbF FETKY MOSFET & Schottky Diode Top View @ -4 ...

Page 2

... IRF7524D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 -1.2A D 1.5 1.0 0.5 = -10V 0.0 A -60 -40 4.0 4.5 5.0 Fig 4. Normalized On-Resistance IRF7524D1PbF VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( -4.5V GS -20 ...

Page 4

... IRF7524D1PbF 500 1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150° 25°C J 0.1 0.01 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics ...

Page 5

... VGS = -5.0V 0.2 0.0 0.0 0.5 1 Drain Current (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 0.300 0.250 0.200 0.150 0.100 1.5 2.0 2 Fig 11. Typical On-Resistance Vs. Gate IRF7524D1PbF Notes: 1. Duty factor Peak thJC -1. ...

Page 6

... IRF7524D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 150° 125° 25°C J 160 140 120 100 0.6 0.8 1.0 (V) ( Fig.14 - Maximum Allowable Ambient T = 50°C J 25°C 00° ...

Page 7

... P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL (27-52) IF PRECEDED BY A LETT ER W YEAR A 2001 B 2002 C 2003 D 2004 2005 2006 2007 2008 X 2009 Y 2010 Z IRF7524D1PbF INCHES MILLIMETERS MIN MAX MIN MAX .036 .044 0.91 1.11 .004 .008 0.10 0.20 .010 .014 0.25 0.36 .005 .007 0.13 ...

Page 8

... IRF7524D1PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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