IRF7526D1PBF International Rectifier, IRF7526D1PBF Datasheet
IRF7526D1PBF
Specifications of IRF7526D1PBF
Related parts for IRF7526D1PBF
IRF7526D1PBF Summary of contents
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... Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9) ‚ ≤ -1.2A, di/dt ≤ 160A/µs, V ≤ ƒ Pulse width ≤ 300µs – duty cycle ≤ 2% „ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com IRF7526D1PbF FETKY Power Top View @ -4 ...
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... IRF7526D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd t Turn-On Delay Time d(on) t Rise Time ...
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... Power Mosfet Characteristics 10 TOP BOTTOM - 3. 0.1 10 0.1 Fig 2. Typical Output Characteristics 2 -1.2A D 1.5 1.0 0.5 = -10V 0.0 A -60 -40 6.0 6.5 7.0 Fig 4. Normalized On-Resistance IRF7526D1PbF VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V -3.0V 20µs PULSE WIDTH T = 150° Drain-to-Source Voltage ( -10V GS - 100 120 140 160 T , Junction Temperature (° ...
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... IRF7526D1PbF 400 1MHz iss rss oss ds gd 300 C iss C oss 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 150° 25°C J 0.1 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics ...
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... VGS = -4.5V 0.5 VGS = -10V 0 Drain Current (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration (sec) 1 0.60 0.50 0.40 0.30 0.20 0. Fig 11. Typical On-Resistance Vs. Gate IRF7526D1PbF Notes: 1. Duty factor Peak thJC -2. Gate-to-Source Voltage (V) GS Voltage ...
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... IRF7526D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics 6 100 10 0.1 0.01 0.001 0.0001 T = 150° 125° 25°C J 160 140 120 100 0.6 0.8 1.0 ( (V) F Fig.14 - Maximum Allowable Ambient T = 150° ...
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... Fig 15a. Basic Gate Charge Waveform Fig 16a. Switching Time Test Circuit V GS 10% 90 Fig 16b. Switching Time Waveforms www.irf.com Current Regulator Same Type as D.U.T. .2µF 12V V GS Fig 15b. Gate Charge Test Circuit - + d(on) r d(off) f IRF7526D1PbF 50KΩ .3µ D.U.T. + -3mA Current Sampling Resistors 7 ...
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... IRF7526D1PbF + - + - • • • Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ Fig 8 • • • P. Period V GS Current di/dt Diode Recovery dv/ Forward Drop =10V www.irf.com ...
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... P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL (27-52) IF PRECEDED BY A LET TER W YEAR A 2001 B 2002 C 2003 D 2004 2005 2006 2007 2008 X 2009 Y 2010 Z IRF7526D1PbF INCHES MILLIMETERS DIM MIN MAX MIN MAX A .036 .044 0.91 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 ...
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... IRF7526D1PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...