IRLR024NTRRPBF International Rectifier, IRLR024NTRRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLR024NTRRPBF
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
Fig 3. Typical Transfer Characteristics
100
0.1
Fig 1. Typical Output Characteristics
0.1
10
10
1
1
0.1
2
TOP
BOTTOM 2.5V
3
V
V
GS
DS
15V
VGS
12V
10V
8.0V
6.0V
4.0V
3.0V
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
1
5
2.5V
T = 175°C
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 15V
10
8
9
100
10
A
A
Fig 2. Typical Output Characteristics
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
I
D
= 18A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
Vs. Temperature
0
, Drain-to-Source Voltage (V)
20
1
40
2.5V
60
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
3
100
A
A