IRLR024NTRRPBF International Rectifier, IRLR024NTRRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLR024NTRRPBF
• Description: MOSFET N-CH 55V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR024NTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
140
120
100
80
60
40
20
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
= 25V
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
125
I
www.irf.com
D
TOP
BOTTOM
+
-
150
V
DS
7.8A
11A
4.5A
I
D
175
A