IRF7233PBF International Rectifier, IRF7233PBF Datasheet

MOSFET P-CH 12V 9.5A 8-SOIC

IRF7233PBF

Manufacturer Part Number
IRF7233PBF
Description
MOSFET P-CH 12V 9.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7233PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 9.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 5V
Input Capacitance (ciss) @ Vds
6000pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.020 Ohms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
9.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
370 ns
Minimum Operating Temperature
- 55 C
Rise Time
540 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7233PBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
Thermal Resistance
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
Top View
HEXFET
8
7
6
5
IRF7233PbF
-55 to + 150
Max.
Max.
±9.5
±6.0
0.02
D
D
±76
± 12
50
D
D
-12
2.5
1.6
A
60
SO-8
®
R
DS(on)
Power MOSFET
V
DSS
= 0.020Ω
= -12V
Units
Units
W/°C
°C/W
mJ
°C
V
A
V
1
11/9/04

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IRF7233PBF Summary of contents

Page 1

... 70°C Power Dissipation D A Linear Derating Factor E Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7233PbF HEXFET Top View Max. @ -4.5V ±9 -4.5V ±6.0 GS 0.02 - 150 Max. ƒ ® ...

Page 2

... IRF7233PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... BOTTOM - 1. Fig 2. Typical Output Characteristics 2 1 150°C J 1.0 0.5 = -10V 0.0 A -60 -40 -20 2.5 3.0 Fig 4. Normalized On-Resistance IRF7233PbF VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V 20µs PULSE WIDTH -1. 150° Drain-to-Source Voltage (V) DS -9. -4. 100 120 140 160 ° ...

Page 4

... IRF7233PbF 6000 1kHz iss rss oss ds gd 5000 C iss 4000 3000 C oss C rss 2000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150° 25° 0.0 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 140 120 100 125 150 25 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7233PbF I D TOP -4.2A -7.6A BOTTOM -9. 100 125 ° J Vs. Drain Current ...

Page 6

... IRF7233PbF SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. ...

Page 7

... FEED DIRECTION 7.9 ( .312 ) 330.00 (12.992) MAX. Data and specifications subject to change without notice. Qualifications Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.11/04 IRF7233PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 7 ...

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