IRF7809AVPBF International Rectifier, IRF7809AVPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7809AVPBF
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7809AVPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 13.3A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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