IRF7809AVPBF International Rectifier, IRF7809AVPBF Datasheet - Page 8

• Manufacturer Part Number: IRF7809AVPBF
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7809AVPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 13.3A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7809AVPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
8.1 ( .318 )
7.9 ( .312 )
This product has been designed and qualified for the Consumer market.
TERMINAL NUMBER 1
(12.992)
330.00
MAX.
Visit us at www.irf.com for sales contact information.08/05
Data and specifications subject to change without notice.
Qualifications Standards can be found on IR’s Web site.
FEED DIRECTION
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
TAC Fax: [phone]
www.irf.com