IRF7809AVPBF International Rectifier, IRF7809AVPBF Datasheet

MOSFET N-CH 30V 13.3A 8-SOIC

IRF7809AVPBF

Manufacturer Part Number
IRF7809AVPBF
Description
MOSFET N-CH 30V 13.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7809AVPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 5V
Input Capacitance (ciss) @ Vds
3780pF @ 16V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.009Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Continuous Drain Current
13.3A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7809AVPBF
Manufacturer:
IR
Quantity:
5 452
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
The IRF7809AV offers particulary low R
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
• 100% Tested for Rg
• Lead-Free
Absolute Maximum Ratings
Thermal Resistance
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
DS(on)
applications
, gate charge and Cdv/dt-induced turn-on immunity.
GS
≥ 4.5V)
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
DS(on)
and high
Symbol
T
J
R
R
V
V
, T
I
I
P
I
DM
I
SM
θJA
DS
GS
D
θJL
S
D
STG
DEVICE CHARACTERISTICS…
SO-8
R
Q
Q
Q
IRF7809A V
–55 to 150
DS
G
sw
oss
IRF7809AVPbF
(on)
13.3
14.6
±12
100
2.5
3.0
30
50
Max.
2.5
50
20
IRF7809AV
G
S
S
S
7.0mΩ
41nC
14nC
30nC
1
2
3
4
Top View
PD - 95212A
Units
°C/W
°C/W
8
7
6
5
°C
W
V
A
Units
A
D
D
D
D
A
A
08/23/05

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IRF7809AVPBF Summary of contents

Page 1

... Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead SO-8 DEVICE CHARACTERISTICS… and high DS(on) Symbol 25° 90° 25° 90° STG θJA R θ 95212A IRF7809AVPbF Top View IRF7809AV R 7.0mΩ DS (on) Q 41nC G Q 14nC sw Q 30nC oss IRF7809A V Units 30 V ±12 13.3 14.6 A 100 2 ...

Page 2

... IRF7809AVPbF Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current* Total Gate Chg Cont FET Q G Total Gate Chg Sync FET Q G Pre-Vth Q GS1 Gate-Source Charge ...

Page 3

... TOP BOTTOM 100 ° 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = 15V 0.0 -60 -40 -20 3.2 3.4 Fig 4. Normalized On-Resistance IRF7809AVPbF VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 2.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 15A ...

Page 4

... IRF7809AVPbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com IRF7809AVPbF Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor ...

Page 6

... IRF7809AVPbF 0.008 4.5V 0.007 0.006 10V 0.005 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V Q .3µ D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 14a&b. Unclamped Inductive Test circuit ...

Page 7

... QÃ2Ã @TDBI6U@TÃG@6 AS@@ QSP V8UÃPQUDPI6G `Ã2ÃG6TUÃ DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ ) GPUÃ8P @ Q6SUÃIVH7@S IRF7809AVPbF DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ & ...

Page 8

... IRF7809AVPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This product has been designed and qualified for the Consumer market. ...

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