MOSFET N-CH 40V 104A TO-220AB

IRL1104PBF

Manufacturer Part NumberIRL1104PBF
DescriptionMOSFET N-CH 40V 104A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104PBF datasheet
 


Specifications of IRL1104PBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max167WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRL1104PBF  
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Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
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Fully Avalanche Rated
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Lead-Free
l
Description
®
Fifth Generation HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
®
HEXFET
power MOSFETs are well known for, provides
the designer with an extremely efficient device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ‚
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt ƒ
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient
θJA
www.irf.com
G
@ 10V
GS
@ 10V
GS
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
PD - 95404
IRL1104PbF
®
HEXFET
Power MOSFET
D
V
= 40V
DSS
R
= 0.008Ω
DS(on)
I
= 104A…
D
S
TO-220AB
Max.
Units
104…
74
A
167
W
1.1
W/°C
±16
V
340
mJ
62
A
17
mJ
5.0
V/ns
-55 to + 175
°C
Typ.
Max.
Units
––––
0.9
0.50
––––
°C/W
––––
62
6/17/04
1

IRL1104PBF Summary of contents

  • Page 1

    ... R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– 95404 IRL1104PbF ® HEXFET Power MOSFET 40V DSS R = 0.008Ω DS(on 104A… TO-220AB Max. ...

  • Page 2

    ... IRL1104PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resis- DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... PULSE WIDTH 1 2.0 4.0 6 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com ° 10 100 ° 175 50V 25 8.0 10.0 IRL1104PbF 1000 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 20µs PULSE WIDTH T = 175 0.1 ...

  • Page 4

    ... IRL1104PbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 175 C ° J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

  • Page 5

    ... RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1104PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

  • Page 6

    ... IRL1104PbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 15V 600 DRIVER 400 + 200 (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b ...

  • Page 7

    ... Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® HEXFET power MOSFETs IRL1104PbF „ P.W. Period * V =10V ...

  • Page 8

    ... IRL1104PbF Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 LOT CODE 1789 19, 1997 LINE " ...

  • Page 9

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...