IRL1104PBF International Rectifier, IRL1104PBF Datasheet
IRL1104PBF
Specifications of IRL1104PBF
Related parts for IRL1104PBF
IRL1104PBF Summary of contents
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... R Junction-to-Ambient θJA www.irf.com G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– –––– 95404 IRL1104PbF ® HEXFET Power MOSFET 40V DSS R = 0.008Ω DS(on 104A… TO-220AB Max. ...
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... IRL1104PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resis- DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... PULSE WIDTH 1 2.0 4.0 6 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com ° 10 100 ° 175 50V 25 8.0 10.0 IRL1104PbF 1000 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 100 2.7V 10 20µs PULSE WIDTH T = 175 0.1 ...
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... IRL1104PbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 T = 175 C ° J 100 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...
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... RESPONSE) 0.01 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRL1104PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...
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... IRL1104PbF D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 800 15V 600 DRIVER 400 + 200 (BR)DSS Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b ...
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... Driver same type as D.U.T. • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test Period D = Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® HEXFET power MOSFETs IRL1104PbF „ P.W. Period * V =10V ...
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... IRL1104PbF Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 LOT CODE 1789 19, 1997 LINE " ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...