IRL1004SPBF International Rectifier, IRL1004SPBF Datasheet - Page 4

• Manufacturer Part Number: IRL1004SPBF
• Description: MOSFET N-CH 40V 130A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1004SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5330pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 130 A
• Gate Charge, Total: 100 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.0065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 25 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 63 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 110A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1004SPBF

4
1000
10000
100
8000
6000
4000
2000
0.1
10
1
0.0
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 175 C
J
Drain-to-Source Voltage
C oss
C iss
C rss
V
0.5
V
SD
DS
°
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1.0
T = 25 C
=
=
=
=
J
0V,
C
C
C
gs
gd
ds
1.5
+ C
+ C
°
10
f = 1MHz
gd ,
gd
2.0
C
ds
V
SHORTED
GS
2.5
= 0 V
3.0
100
10000
1000
100
12
10
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0
1
I =
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 25 C
= 175 C
78 A
OPERATION IN THIS AREA LIMITED
V
Gate-to-Source Voltage
30
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
60
V
V
BY R
DS
DS
90
10
= 32V
= 20V
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
120
www.irf.com
150
10us
100us
1ms
10ms
13
180
100