IRL1004SPBF International Rectifier, IRL1004SPBF Datasheet - Page 6

• Manufacturer Part Number: IRL1004SPBF
• Description: MOSFET N-CH 40V 130A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL1004SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5330pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 130 A
• Gate Charge, Total: 100 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.0065 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 25 ns
• Time, Turn-on Delay: 16 ns
• Transconductance, Forward: 63 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 110A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 6.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL1004SPBF

6
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
V
I
AS
4.5 V
DS
V
G
4.5 V
R
G
Q
GS
V
t
DS
p
t
p
Q
Charge
Q
GD
I
G
D.U.T.
AS
L
0.01Ω
V
(BR)DSS
V
+
-
V
DD
DD
1800
1500
1200
900
600
300
0
12V
25
V
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
GS
Starting T , Junction Temperature ( C)
Same Type as D.U.T.
Current Regulator
50
.2µF
J
50KΩ
3mA
Vs. Drain Current
75
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
125
TOP
BOTTOM
I
www.irf.com
D
+
-
150
V
DS
°
I D
32A
55A
78A
175