IRL1004SPBF International Rectifier, IRL1004SPBF Datasheet

IRL1004SPBF

Manufacturer Part Number

IRL1004SPBF

Description

MOSFET N-CH 40V 130A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRL1004LPBF.pdf (11 pages)

2.IRL1004SPBF.pdf (4 pages)

Specifications of IRL1004SPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6.5 mOhm @ 78A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

130A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

100nC @ 4.5V

Input Capacitance (ciss) @ Vds

5330pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Current, Drain

130 A

Gate Charge, Total

100 nC

Package Type

D2Pak

Polarization

N-Channel

Power Dissipation

200 W

Resistance, Drain To Source On

0.0065 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

25 ns

Time, Turn-on Delay

16 ns

Transconductance, Forward

63 S

Voltage, Breakdown, Drain To Source

40 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±16 V

Transistor Polarity

N Channel

Continuous Drain Current Id

110A

Drain Source Voltage Vds

40V

On Resistance Rds(on)

6.5mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRL1004SPBF

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Fifth Generation HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in a wide

variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRL1004L) is available for low-

profile application.

Thermal Resistance

Description

www.irf.com

Absolute Maximum Ratings

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of

@ T

Logic-Level Gate Drive

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current †

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy†

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)*

power MOSFETs from

Parameter

@ 10V†

IRL1004S

Typ.

300 (1.6mm from case)

–––

HEXFET

Pak

-55 to + 175

Max.

130 …

520

200

± 16

700

92 …

3.8

1.3

5.0

DS(on)

Power MOSFET

IRL1004L

Max.

0.75

TO-262

DSS

= 130A…

= 0.0065Ω

= 40V

Units

W/°C

°C/W

V/ns

°C

07/19/04

Related parts for IRL1004SPBF

IRL1004SPBF Summary of contents

Page 1

... Description ® Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 1000 4.0V 3.5V BOTTOM 2.7V 100 10 1 2.7V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

1MHz iss rss 8000 oss iss 6000 C oss 4000 2000 C ...

Page 5

LIMITED BY PACKAGE 120 100 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 ...

Page 6

D.U. 4 0.01Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Fig 14. For N-channel www.irf.com + • • ƒ • - „ - • • • • ...

Page 8

Dimensions are shown in millimeters (inches 530S WIT H LOT CODE 8024 02, 2000 ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE: THIS IS AN IRL 3103L LOT CODE 1789 AS S EMBL 19, 1997 IN THE INE ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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