TPCA8006-H(TE12L,Q Toshiba, TPCA8006-H(TE12L,Q Datasheet - Page 3

• Manufacturer Part Number: TPCA8006-H(TE12L,Q
• Description: MOSFET N-CH 100V 18A 8-SOPA
• Manufacturer: Toshiba

Specifications of TPCA8006-H(TE12L,Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 67 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 780pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOPA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8006HTE12LQTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
Q
Q
I
I
C
I
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
oss
on
off
gs1
SW
rss
t
t
iss
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
Duty < = 1%, t
V
I
D
DR
V
GS
DS
DS
GS
DS
DS
DD
= 10 mA, V
GS
3
(Ta = 25°C)
= 18 A, V
= 100 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±20 V, V
= 10 V, I
∼ − 80 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
GS
= 10 µs
GS
= 1 mA
= 9 A
DS
= 9 A
⎯
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
= 0 V
I
D
V
= 9 A
DD
∼ − 50 V
D
= 18 A
V
OUT
Min
100
Min
3.0
7.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
780
390
5.6
4.0
6.9
⎯
⎯
⎯
⎯
41
15
17
13
13
12
⎯
⎯
TPCA8006-H
3
2
2006-11-20
±100
Max
Max
−1.7
100
5.0
67
36
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nA
µA
pF
nC
ns
V
V
S
A
V