HAT2165N Renesas Electronics America, HAT2165N Datasheet
HAT2165N
Specifications of HAT2165N
Related parts for HAT2165N
HAT2165N Summary of contents
Page 1
... In the initial phase products using the LFPAK -i, three power MOSFETs — the HAT2165N, HAT2166N, and HAT2168N — for server DC-DC power supply voltage regulator (VR) are being released, with sample shipments scheduled to begin in July 2004 in Japan ...
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... MOSFETs that need to be installed in a VR, enabling VRs to be made smaller. < Details of the New Products > The HAT2165N, HAT2166N, and HAT2168N being released in this phase are 30 V withstand-voltage N- channel power MOSFETs for highly efficient server VR use that offer low thermal resistance and on- resistance ...
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... made smaller. Renesas Technology’s well-established 0.35 µm process 8th-generation trench structure is used for the elements, enabling low on-resistance figures (at VGS = 2.8 m typ. for the HAT2165N, 3.2 m typ. for the HAT2166N, and 6.3 m typ. for the HAT2168N to be achieved. ...
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... Specifications > 25ºC Maximum Ratings Product Name VDSS (V) HAT2165N 30 HAT2166N 30 HAT2168N 30 Information contained in this news release is current as of the date of the press announcement, but may be subject to change without prior notice. On-Resistance RDS(on VGS = 4.5 V VGS = (A) typ. max. typ. 55 3.7 5.6 2 ...