HAT2165N Renesas Electronics America, HAT2165N Datasheet - Page 3

• Manufacturer Part Number: HAT2165N
• Description: MOSFET N-CH 30V 55A LFPAKI
• Manufacturer: Renesas Electronics America

Specifications of HAT2165N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK-i
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

When configuring a VR with a voltage specification of 1.3 V and current specification of 60 A, for example,
a total of 16 conventional power MOSFETs are required for a 4-phase configuration at 15 A per phase
(eight sets each comprising one high-side element and one low-side element*
products each phase can be increased by approximately 30%, to 20 A, enabling a 3 -phase configuration to
be used that requires a total of 12 power MOSFETs (six sets each comprising one high-side element and
one low-side element), and so allowing the VR to be made smaller.
Renesas Technology’s well-established 0.35 µm process 8th-generation trench structure is used for the
elements, enabling low on-resistance figures (at VGS = 10 V) of 2.8 m typ. for the HAT2165N, 3.2 m
typ. for the HAT2166N, and 6.3 m typ. for the HAT2168N to be achieved.
The HAT2168N is ideal for use as a VR high-side element (for control switch use), and the HAT2165N
and HAT2166N for use as low-side elements (for synchronous rectification). The low-Ron type
HAT2165N and HAT2166N are also suitable for use in synchronous rectification handling a high power
switching power supply secondary -side current (low-voltage output Vout = 3.3 V or less).
Notes: 1.
< Typical Applications >
< Prices in Japan > *For Reference
Product Name
HAT2165N
HAT2166N
HAT2168N
*
Server DC-DC converters (VRs)
Switching power supply secondary-side (low-voltage output Vout = 3.3 V or less) synchronous
rectification
Product names, company names, or brands mentioned are the property of their respective owners.
2.
3.
Inductance: Inductance that is naturally present in wiring, having a value approximately
proportional to the length of the wiring. The larger this value, the less readily gate current for
turning a power MOSFET on and off flows, impeding high-speed switching. In high-
frequency switching regions, in particular, inductance is a cause of major switching loss.
On-resistance: Operational resistance when a power MOSFET operates. On -resistance is the
parameter that most affects power MOSFET performance, with performance increasing as on-
resistance decreases.
High-side and lo w-side elements: These elements are used as non-insulating type DC-DC
converter switches, enabling voltage conversion to be performed by means of alternate on/off
switching while maintaining synchronization between the high side and low side. The high-
side switch is the DC-DC converter control switch, and the low-side switch is the synchronous
rectification switch. Usually, server VR input voltage Vin is 12 V while the CPU uses a lower
voltage of 1.2 V to 1.3 V or less, and therefore for the high-side on-period a narrow pulse of
approximately 10% or so of one cycle is controlled, and the remaining 90% is the on-period of
the low-side element, so that an element whose characteristics emphasize switching speed is
selected for the high-side element, and an element whose characteristics emphasize low on-
resistance (low RDS(on)) is selected for the low-side element.
Package
LFPAK-i
LFPAK-i
LFPAK-i
-more-
Sample Price [ Tax included ] (Yen)
160 [ 168 ]
140 [ 147 ]
100 [ 105 ]
3
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