BSS127 L6327 Infineon Technologies, BSS127 L6327 Datasheet
BSS127 L6327
Specifications of BSS127 L6327
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BSS127 L6327 Summary of contents
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Type ® SIPMOS Small-Signal-Transistor Features • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Type Package BSS127 PG-SOT-23 Maximum ratings =25 °C, unless ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 1.47 Symbol Conditions R thJA =25 °C, unless ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.6 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by ...
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Typ. output characteristics I =f =25 ° parameter 0.03 0.025 0.02 0.015 0.01 0.005 Typ. transfer characteristics I =f |>2 ...
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Drain-source on-state resistance R =f =0.016 A; V DS(on 1000 900 800 700 600 98 % 500 400 300 200 100 0 -60 - Typ. capacitances C =f ...
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Typ. gate charge V =f =0.01 A pulsed GS gate D parameter 120 0.1 0.2 0.3 Q gate 15 Gate charge waveforms ...
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Package Outline: Footprint: Rev. 1.47 SOT-23 Packaging: page 8 BSS127 2010-07-29 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...