AO3460 Alpha & Omega Semiconductor Inc, AO3460 Datasheet - Page 4

• Manufacturer Part Number: AO3460
• Description: MOSFET N-CH 60V .65A SOT23-3
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3460

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 Ohm @ 650mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 650mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 27pF @ 30V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 785-1194-2

AO3460
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10.000
1.000
0.100
0.010
0.001
10
0.001
8
6
4
2
0
0.01
0.0
0.01
0.1
10
0.00001
1
Figure 9: Maximum Forward Biased Safe
R
limited
Figure 7: Gate-Charge Characteristics
DS(ON)
0.1
D=T
T
R
T
T
J,PK
θJA
V
I
J(Max)
C
D
DS
=25°C
=0.65A
0.1
=125°C/W
Operating Area (Note E)
on
=T
/T
=30V
0.0001
0.2
A
=150°C
+P
DM
V
Q
.Z
DS
g
θJA
0.3
(nC)
(Volts)
1
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
V
V
θJA
0.001
DS
DS
0.4
=0V, V
=V
DC
Single Pulse
GS
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
I
D
0.5
GS
=250µA
=±10V
0.01
0.6
100
10s
1s
10µs
100µs
1ms
10ms
0.1s
Pulse Width (s)
0.1
30
25
20
15
10
20
16
12
5
0
0.0001
8
4
0
0
Figure 10: Single Pulse Power Rating Junction-to-
0.001
Figure 8: Capacitance Characteristics
10
1
C
rss
P
P
D
D
0.01
C
T
T
20
Ambient (Note E)
oss
on
on
Pulse Width (s)
C
iss
10
V
T
DS
0.1
(Volts)
30
1
100
40
T
T
J(Max)
A
=25°C
=150°C
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10
50
1000
100
60