BSP318S L6327 Infineon Technologies, BSP318S L6327 Datasheet

MOSFET N-CH 60V 2.6A SOT-223

BSP318S L6327

Manufacturer Part Number
BSP318S L6327
Description
MOSFET N-CH 60V 2.6A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP318S_L6327.pdf (9 pages)

Specifications of BSP318S L6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSP318SL6327INTR
BSP318SL6327XT
SP000235371
Type
BSP318S
SIPMOS
Features
Maximum Ratings,at T
Parameter
Continuous drain current
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche current,periodic limited by T
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
•
• Qualified according to AEC Q101
D
S
Enhancement mode
A
jmax
A
N-Channel
Avalanche rated
Logic Level
d v /d t rated
Pb-free lead plating; RoHS compliant
= 2.6 A, V
= 2.6 A, V
= 25 °C
= 25 °C
= 150 °C
DS
DD
Small-Signal-Transistor
= 20 V, d i /d t = 200 A/µs,
= 25 V, R
Package
PG-SOT223
j
= 25 °C, unless otherwise specified
GS
= 25
Tape and Reel
L6327: 1000 pcs/r
Product Summary
Drain source voltage
Drain-Source on-state resistance R
Continuous drain current
jmax
jmax
Rev 2.2
Page 1
Pin 1
G
Symbol
I
I
E
I
E
d v /d t
V
P
T
Pin 2, 4
D
D puls
AR
j ,
AS
AR
GS
tot
Marking
BSP318S
T
D
stg
PIN 3
S
-55... +150
55/150/56
Non dry
V
I
Packaging
Value
D
10.4
0.18
DS
DS(on)
2.6
2.6
1.8
60
20
6
4
2008-03-21
BSP318S
0.09
2.6
60
1
Unit
A
mJ
A
mJ
kV/µs
V
W
°C
V
A
2
VPS05163
3

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BSP318S L6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features N-Channel Enhancement mode Avalanche rated Logic Level rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSP318S PG-SOT223 Maximum Ratings, Parameter Continuous drain current Pulsed ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Dynamic Characteristics Gate charge at threshold 0 Gate charge 2.6 ...

Page 5

Power Dissipation tot A BSP318S 1.9 W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area parameter : D ...

Page 6

Typ. output characteristic =25° parameter µs p BSP318S 6 1.80W tot 5 5.0 4.5 4.0 ...

Page 7

Typ. capacitances parameter MHz Avalanche Energy AS parameter 2 ...

Page 8

Drain-source breakdown voltage (BR)DSS j BSP318S -60 - Rev 2.2 °C 100 180 T j Page 8 BSP318S 2008-03-21 ...

Page 9

Rev 2.2 Page 9 BSP318S 2008-03-21 ...

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