BSP31,115 NXP Semiconductors, BSP31,115 Datasheet

TRANS PNP 60V 1A SOT-223

BSP31,115

Manufacturer Part Number
BSP31,115
Description
TRANS PNP 60V 1A SOT-223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of BSP31,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.3W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
1300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933981970115
BSP31 T/R
BSP31 T/R
Product data sheet
Supersedes data of 1997 Apr 08
dbook, halfpage
DATA SHEET
BSP31; BSP32; BSP33
PNP medium power transistors
DISCRETE SEMICONDUCTORS
M3D087
1999 Apr 26

Related parts for BSP31,115

BSP31,115 Summary of contents

Page 1

DATA SHEET dbook, halfpage BSP31; BSP32; BSP33 PNP medium power transistors Product data sheet Supersedes data of 1997 Apr 08 DISCRETE SEMICONDUCTORS M3D087 1999 Apr 26 ...

Page 2

... NXP Semiconductors PNP medium power transistors FEATURES • High current (max • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ...

Page 3

... NXP Semiconductors PNP medium power transistors THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook” ...

Page 4

... NXP Semiconductors PNP medium power transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Apr scale 0.32 6 ...

Page 5

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 6

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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