BSP 51 E6327 Infineon Technologies, BSP 51 E6327 Datasheet
Home Discrete Semiconductor Products Transistors (BJT) - Single BSP 51 E6327
Manufacturer Part Number
BSP 51 E6327
Description
TRANSISTOR DARL NPN 60V SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP 51 E6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.8V @ 1mA, 1A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
1 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSP51E6327XT SP000011127
NPN Silicon Darlington Transistors
Type
BSP50
BSP51
BSP52
1
Maximum Ratings
Parameter
Collector-emitter voltage
BSP50
BSP51
BSP52
Collector-base voltage
BSP50
BSP51
BSP52
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation-
T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
S
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP60 - BSP52 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
124 °C
Marking
BSP50
BSP51
BSP52
1=B
1=B
1=B
1)
2=C
2=C
2=C
Pin Configuration
1
3=E
3=E
3=E
Symbol
V
V
V
I
I
I
P
T
T
C
CM
B
j
stg
CEO
CBO
EBO
tot
4=C
4=C
4=C
4
-
-
-
-65 ... 150
Value
100
150
1.5
45
60
80
60
80
90
-
-
-
5
1
2
BSP50-BSP52
Package
SOT223
SOT223
SOT223
2007-03-30
Unit
V
A
mA
W
°C
1
2
3
Related parts for BSP 51 E6327
BSP 51 E6327 Summary of contents
NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 - BSP52 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BSP50 BSP50 BSP51 BSP51 BSP52 BSP52 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 ...
Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BSP50 mA BSP51 C B ...
Electrical Characteristics at T Parameter AC Characteristics Transition frequency I = 100 mA 100 MHz C CE Tum-on time I = 500 mA 0 Tum-off time ...
Switching time test circuit Switching time waveform 4 BSP50-BSP52 2007-03-30 ...
DC current gain BSP 50... Base-emitter saturation voltage ...
Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BSP 50...52 3 ...
Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
Related keywords
BSP 51 E6327 datasheet BSP 51 E6327 data sheet BSP 51 E6327 pdf datasheet BSP 51 E6327 component BSP 51 E6327 part BSP 51 E6327 distributor BSP 51 E6327 RoHS BSP 51 E6327 datasheet download