BSP 51 E6327 Infineon Technologies, BSP 51 E6327 Datasheet

TRANSISTOR DARL NPN 60V SOT-223

BSP 51 E6327

Manufacturer Part Number
BSP 51 E6327
Description
TRANSISTOR DARL NPN 60V SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP 51 E6327

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.8V @ 1mA, 1A
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
1 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSP51E6327XT
SP000011127
NPN Silicon Darlington Transistors
Type
BSP50
BSP51
BSP52
1
Maximum Ratings
Parameter
Collector-emitter voltage
BSP50
BSP51
BSP52
Collector-base voltage
BSP50
BSP51
BSP52
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation-
T
Junction temperature
Storage temperature
Pb-containing package may be available upon special request
S
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP60 - BSP52 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
124 °C
Marking
BSP50
BSP51
BSP52
1=B
1=B
1=B
1)
2=C
2=C
2=C
Pin Configuration
1
3=E
3=E
3=E
Symbol
V
V
V
I
I
I
P
T
T
C
CM
B
j
stg
CEO
CBO
EBO
tot
4=C
4=C
4=C
4
-
-
-
-65 ... 150
Value
100
150
1.5
45
60
80
60
80
90
-
-
-
5
1
2
BSP50-BSP52
Package
SOT223
SOT223
SOT223
2007-03-30
Unit
V
A
mA
W
°C
1
2
3

Related parts for BSP 51 E6327

BSP 51 E6327 Summary of contents

Page 1

NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 - BSP52 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking BSP50 BSP50 BSP51 BSP51 BSP52 BSP52 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 ...

Page 2

Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BSP50 mA BSP51 C B ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Transition frequency I = 100 mA 100 MHz C CE Tum-on time I = 500 mA 0 Tum-off time ...

Page 4

Switching time test circuit Switching time waveform 4 BSP50-BSP52 2007-03-30 ...

Page 5

DC current gain BSP 50... Base-emitter saturation voltage ...

Page 6

Collector-base capacitance C Emitter-base capacitance CEB Permissible Pulse Load totmax totDC p BSP 50...52 3 ...

Page 7

Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords