BSP 51 E6327 Infineon Technologies, BSP 51 E6327 Datasheet - Page 3

• Manufacturer Part Number: BSP 51 E6327
• Description: TRANSISTOR DARL NPN 60V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP 51 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.8V @ 1mA, 1A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSP51E6327XT; SP000011127

Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Tum-on time
I
Tum-off time
I
C
C
C
= 100 mA, V
= 500 mA, I
= 500 mA, I
B1
B1
CE
= I
= I
= 5 V, f = 100 MHz
B2
B2
= 0.5 mA
= 0.5 mA
A
= 25°C, unless otherwise specified
3
Symbol
f
t
t
T
(on)
(off)
min.
-
-
-
Values
1500
400
typ.
200
BSP50-BSP52
max.
2007-03-30
-
-
-
Unit
MHz
ns