BSP31,115 NXP Semiconductors, BSP31,115 Datasheet - Page 4

• Manufacturer Part Number: BSP31,115
• Description: TRANS PNP 60V 1A SOT-223
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSP31,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933981970115; BSP31 T/R; BSP31 T/R

NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 26
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
PNP medium power transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
1
e
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
4
2
c
H
7.3
6.7
E
4 mm
A
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
BSP31; BSP32; BSP33
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product data sheet
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223