BSZ180P03NS3 G Infineon Technologies, BSZ180P03NS3 G Datasheet

BSZ180P03NS3 G

Manufacturer Part Number

BSZ180P03NS3 G

Description

MOSFET P-CH 30V 39.6A TSDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSZ180P03NS3_G.pdf (9 pages)

Specifications of BSZ180P03NS3 G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

18 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

39.6A

Vgs(th) (max) @ Id

1.9V @ 48µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

2220pF @ 15V

Power - Max

2.1W

Mounting Type

Surface Mount

Package / Case

8-TSDSON

Package

S3O8 (3x3mm style SuperSO8)

Vds (max)

-30.0 V

Rds (on) (max) (@10v)

18.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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