SPD04P10P G Infineon Technologies, SPD04P10P G Datasheet

SPD04P10P G

Manufacturer Part Number

SPD04P10P G

Description

MOSFET P-CH 100V 4A TO252-3

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.SPD04P10P_G.pdf (9 pages)

Specifications of SPD04P10P G

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1 Ohm @ 2.8A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 380µA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

319pF @ 25V

Power - Max

38W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

1000 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

4 A

Power Dissipation

38000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package

DPAK (TO-252)

Vds (max)

-100.0 V

Rds (on) (max) (@10v)

1,000.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000212230

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Tape and reel information

1000 pcs / reel

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