IPD050N03LG Infineon Technologies, IPD050N03LG Datasheet - Page 6

• Manufacturer Part Number: IPD050N03LG
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD050N03LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 15V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD050N03LGINTR; IPD050N03LGXT; SP000254716; SP000680630

Rev. 1.02
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
4
DS
=f(T
8
6
4
2
0
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=30 A; V
98 %
20
10
GS
V
=10 V
T
j
DS
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
3
2
1
0
-60
)
0
j
); V
j
IPS050N03L G
IPD050N03L G
GS
-20
=V
0.5
175 °C
DS
20
; I
D
z
=250 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
175 °C, 98%
100
25 °C, 98%
IPU050N03L G
IPF050N03L G
1.5
140
2008-04-15
180
2