IPD78CN10N G Infineon Technologies, IPD78CN10N G Datasheet
IPD78CN10N G
Manufacturer Part Number
IPD78CN10N G
Description
MOSFET N-CH 100V 13A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD78CN10N_G.pdf
(12 pages)
Specifications of IPD78CN10N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
78 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 12µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
716pF @ 50V
Power - Max
31W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
59mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-252
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.078 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000096460
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IPD78CN10N G Summary of contents
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