SPD02N50C3 Infineon Technologies, SPD02N50C3 Datasheet

MOSFET N-CH 560V 1.8A DPAK

SPD02N50C3

Manufacturer Part Number
SPD02N50C3
Description
MOSFET N-CH 560V 1.8A DPAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPD02N50C3

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3.9V @ 80µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
190pF @ 25V
Power - Max
25W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
25000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000014476
SPD02N50C3INTR
SPD02N50C3XT
SPD02N50C3XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD02N50C3
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
SPD02N50C3
Quantity:
4 800
T
T
Gate source voltage
Reverse diode dv/dt
Rev. 2.5
C
C
V
V
DD
DD
5)
G
t
p
T
jmax
P
T
T
jmax
jmax
dv/dt
E
V
V
P
AR
GS
GS
tot
V
DS
T
15
jmax
G
8-04-10
V/ns
2

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SPD02N50C3 Summary of contents

Page 1

Gate source voltage 5) Reverse diode dv/dt Rev. 2.5 T jmax jmax T jmax tot dv/ jmax ...

Page 2

reflow soldering, MSL3 Rev. 2.5 R thJC R thJA V (BR)DSS ...

Page 3

Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate to source charge Gate to drain charge 5 I <=I , di/dt<=400A/us DClink Identical low-side and high-side switch. ...

Page 4

Inverse diode direct current, pulsed Reverse recovery time Reverse recovery charge Peak reverse recovery current Rev rrm P 8-04-10 ...

Page 5

T C Rev. 2 8-04-10 ...

Page 6

Rev. 2 8-04-10 ...

Page 7

max V DS max T j Rev. 2 8-04-10 ...

Page 8

V T (BR)DSS Rev. 2 oss 8-04-10 ...

Page 9

Rev. 2.5 P 8-04-10 ...

Page 10

PG-TO252-3-11, PG-TO252-3-21 G Rev. 2.5 P 8-04-10 ...

Page 11

Rev. 2.5 P 8-04-10 ...

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