IPD040N03LG Infineon Technologies, IPD040N03LG Datasheet - Page 3

• Manufacturer Part Number: IPD040N03LG
• Description: MOSFET N-CH 30V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD040N03LG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 15V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD040N03LG; IPD040N03LGINTR; IPD040N03LGXT; SP000254715

Rev. 1.02
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 4.5 V
=15 V, I
=0 to 10 V
=0 to 4.5 V
=15 V, V
=0 V, I
F
F
G
DS
=30 A,
=I
D
D
=1.6 Ω
GS
GS
=30 A,
=30 A,
=15 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
2900
1100
0.83
typ.
7.4
6.8
4.2
8.8
4.7
4.2
8.3
3.0
60
27
18
38
16
28
-
-
-
IPD040N03L G
IPS040N03L G
max.
3900
1500
400
1.1
24
21
66
20
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-15