IPD50N06S4-09 Infineon Technologies, IPD50N06S4-09 Datasheet

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IPD50N06S4-09

Manufacturer Part Number
IPD50N06S4-09
Description
MOSFET N-CH 60V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD50N06S4-09

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 34µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
3785pF @ 25V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Rev. 1.2
OptiMOS
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD50N06S4-09
®
-T2 Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
2)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N0609
stg
T
T
T
I
-
-
T
-
-
D
C
C
C
C
=25A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
1)
2)
-55 ... +175
55/175/56
Value
200
±20
50
47
87
50
71
PG-TO252-3-11
IPD50N06S4-09
9.0
60
50
2009-07-01
Unit
A
mJ
A
V
W
°C
V
m
A

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IPD50N06S4-09 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.2 Product Summary Marking 4N0609 Symbol Conditions I T =25° =100° =25°C D,pulse =25A =25°C tot stg - - page 1 IPD50N06S4-09 DS DS(on),max D PG-TO252-3-11 Value 1) =10V =10V 200 87 50 ±20 71 -55 ... +175 55/175/ 9 Unit °C 2009-07-01 ...

Page 2

... V V =0V 1mA (BR)DSS =34µA GS(th =60V, V =0V DSS T =25° =60V, V =0V =125° =20V, V =0V GSS =10V, I =50A DS(on page 2 IPD50N06S4-09 Values min. typ. max 2 2.0 3.0 4 100 - - 100 - 7.1 9.0 2009-07-01 Unit K/W V µ ...

Page 3

... 10V plateau =25° S,pulse V =0V, I =50A =25° =30V /dt =100A/µ 2.1K/W the chip is able to carry 67A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD50N06S4-09 Values min. typ. max. - 2911 3785 = 715 - =10V 5 0.6 0. Unit pF 930 60 ...

Page 4

... parameter 1000 100 Rev. 1.2 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N06S4- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2009-07-01 ...

Page 5

... T j 200 160 120 Rev. 1.2 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 13 -55 °C 25 ° 175 ° -60 [V] page 5 IPD50N06S4- ° 5 120 100 T [° 160 200 140 180 2009-07-01 ...

Page 6

... SD SD Rev. 1.2 10 Typ. capacitances C = f(V 10 350 µ 100 140 180 12 Avalanche characteristics parameter: T 100 10 25 ° °C 0.1 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPD50N06S4- MHz [ j(start) 25 °C 100 °C 150 °C 0 [µs] AV Ciss Coss Crss 25 30 100 ...

Page 7

... Avalanche energy parameter 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.2 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD50N06S4- -55 - 105 T [° 145 Q gate 2009-07-01 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 8 IPD50N06S4-09 2009-07-01 ...

Page 9

... Revision History Version Revision 1.1 Revision 1.2 Rev. 1.2 Date 22.08.2008 01.07.2009 page 9 IPD50N06S4-09 Changes Update of RthJC and related parameters from 1.7K/W to 2.1K/W Update of SOA diagram 2009-07-01 ...

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