SPD02N60S5 Infineon Technologies, SPD02N60S5 Datasheet

MOSFET N-CH 600V 1.8A TO-252

SPD02N60S5

Manufacturer Part Number
SPD02N60S5
Description
MOSFET N-CH 600V 1.8A TO-252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPD02N60S5

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
5.5V @ 80µA
Gate Charge (qg) @ Vgs
9.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.8 A
Power Dissipation
25000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Rohs Compliant
Yes
Fall Time
20 ns
Rise Time
35 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000083074
SPD02N60S5
SPD02N60S5INTR
SPD02N60S5XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD02N60S5
Manufacturer:
INFINEON
Quantity:
20 000
Part Number:
SPD02N60S5
Manufacturer:
INFINEON
Quantity:
30 000
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPU02N60S5
SPD02N60S5
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= 1.35 A, V
= 1.8 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO251
PG-TO252
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4226
Q67040-S4213
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
AS
AR
GS
GS
tot
j ,
T
stg
Marking
02N60S5
02N60S5
PG-TO252
2
R
-55... +150
DS(on)
V
I
DS
D
Value
0.07
±20
± 30
1.8
1.1
3.2
1.8
50
25
1
SPU02N60S5
SPD02N60S5
3
PG-TO251
2008-04-07
600
1.8
3
Unit
A
mJ
A
V
W
°C
1
V
A
2
3

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SPD02N60S5 Summary of contents

Page 1

... Operating and storage temperature Rev. 2.5 Ordering Code Q67040-S4226 Q67040-S4213 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPU02N60S5 SPD02N60S5 600 DS(on) I 1.8 D PG-TO252 PG-TO251 Marking 02N60S5 02N60S5 Value 1.8 1.1 3.2 50 0.07 1.8 ±20 ± -55... +150 2008-04-07 V Ω ...

Page 2

... V =V GS(th =600V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =1.1A, V DS(on =25° =150° Page 2 SPU02N60S5 SPD02N60S5 Value Unit 20 V/ns Values Unit min. typ. max K 260 °C Values Unit min. typ. max. 600 - - V - 700 - 3.5 4 ...

Page 3

... Symbol Conditions ≥ DS(on)max =1.1A D =0V, V =25V iss f=1MHz oss C rss =350V, V =0/10V d(on =50 Ω I =1.8A d(off =350V, I =1. =350V, I =1.8A 10V =350V, I =1. (plateau) DD Page 3 SPU02N60S5 SPD02N60S5 Values min. typ. max 240 - - 7 2008-04-07 Unit ...

Page 4

... /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPU02N60S5 SPD02N60S5 Values min. typ 860 = 1.6 Value typ. 0.00002806 0.0001113 0.0001679 0.000547 0.001388 0.019 E xternal H eatsink T case Unit max. 1.8 A 3.2 1.2 ...

Page 5

... parameter µ Rev. 2.5 2 Safe operating area parameter : 100 120 °C 160 Drain-source on-state resistance R DS(on) parameter : I Ω 20V 12V 10V 9V 8. Page 5 SPU02N60S5 SPD02N60S5 ) DS =25° 0.001 SPU02N60S5 98% 4 typ 2 0 -60 - 100 °C 180 T j 2008-04-07 ...

Page 6

... Rev. 2.5 6 Typ. gate charge = DS(on)max GS parameter Avalanche SOA par 1.6 1.4 1.2 0.8 0.6 0.4 0 Page 6 SPU02N60S5 SPD02N60S5 ) Gate = 1.8 A pulsed D SPU02N60S5 16 0 max 0 max ≤ 150 ° j(START =125°C j(START ...

Page 7

... Avalanche energy par 1. 100 11 Typ. capacitances parameter: V =0V, f=1 MHz iss oss rss Rev. 2.5 10 Drain-source breakdown voltage V (BR)DSS 720 V 680 660 640 620 600 580 560 540 120 °C 160 100 V DS Page 7 SPU02N60S5 SPD02N60S5 = SPU02N60S5 -60 - 100 2008-04-07 °C 180 T j ...

Page 8

... Definition of diodes switching characteristics Rev. 2.5 Page 8 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 9

... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 9 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 10

... PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 10 SPU02N60S5 SPD02N60S5 2008-04-07 ...

Page 11

... Rev. 2.5 Page 11 SPU02N60S5 SPD02N60S5 2008-04-07 ...

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