SPN03N60C3 Infineon Technologies, SPN03N60C3 Datasheet
SPN03N60C3
Specifications of SPN03N60C3
SP000101879
SPN03N60C3T
SPN03N60C3XT
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SPN03N60C3 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation, = 25° Operating and storage temperature Rev. 2.1 Ordering Code Q67040S4552 Symbol puls jmax limited jmax tot stg Page 1 SPN03N60C3 @ T 650 V DS jmax R 1.4 DS(on) I 0.7 D SOT-223 4 Marking 03N60C3 Value 0.7 0.4 3 3.2 ±20 30 1.8 -55... +150 2005-02- ...
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... V DSS DS GS =25° =150° =30V, V =0V V GSS GS DS =10V, I =2A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPN03N60C3 Value Unit 50 V/ns Values Unit min. typ. max K/W - 110 - - - 70 Values Unit min. typ. max. 600 - - V - 700 - 2.1 3 3.9 µ ...
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... o(tr) =350V d(on =0.7A d(off =420V, I =0. =420V, I =0.7A 10V =420V, I =0. (plateau) DD Page 3 SPN03N60C3 Values min. typ. max 400 - 150 - =0/10V 5.5 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS 2005-02-21 Unit - ...
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... Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Rev. 2 °C, unless otherwise specified j Symbol Conditions I =25° =0V =420V /dt=100A/µ rrm di /dt rr Page 4 SPN03N60C3 Values Unit min. typ. max 0 1 250 400 ns - 1.8 - µ 540 A/µs 2005-02-21 ...
Page 5
... Transient thermal impedance thJC p parameter K Rev. 2.1 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPN03N60C3 ) DS =25° 0.001 0. 0 =25° µ 20V 2005-02- ...
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... Drain-source on-state resistance DS(on) j parameter : SPN03N60C3 98% typ 1 0 -60 - Rev. 2.1 6 Typ. drain-source on resistance R DS(on) parameter Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPN03N60C3 =f =150° DS(on)max = 10 µs p 25°C 150° 2005-02-21 4V 4.5V 5V 5.5V 6V 6.5V 8V 20V ...
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... Gate 12 Typ. switching time = 125° =0.7A par 500 ns 400 350 300 250 200 150 100 160 220 R G Page 7 SPN03N60C3 ) µ SPN03N60C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 inductive load, T =125° =380V, V =0/+13V, I ...
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... A 3 Typ. switching losses =125° f(R j =20 par mWs 0.048 0.042 0.036 Eoff 0.024 0.018 0.012 0.006 2 2 Page 8 SPN03N60C3 ), inductive load =380V, V =0/+13V dv/dt(on dv/dt(off 100 120 140 160 ), inductive load, T =125° =380V, V =0/+13V, I ...
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... Typ. C stored energy oss E =f(V ) oss DS 2.5 µJ 1 100 200 300 Rev. 2.1 18 Typ. capacitances parameter 100 °C 180 400 V 600 V DS Page 9 SPN03N60C3 ) DS =0V, f=1 MHz GS Ciss Coss Crss 100 200 300 400 2005-02-21 V 600 V DS ...
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... Definition of diodes switching characteristics Rev. 2.1 Page 10 SPN03N60C3 2005-02-21 ...
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... SOT-223 Rev. 2.1 Page 11 SPN03N60C3 2005-02-21 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 12 SPN03N60C3 2005-02-21 ...