IPD038N04N G

Manufacturer Part NumberIPD038N04N G
DescriptionMOSFET N-CH 40V 90A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD038N04N G datasheet
 


Specifications of IPD038N04N G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3.8 mOhm @ 90A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C90AVgs(th) (max) @ Id4V @ 45µA
Gate Charge (qg) @ Vgs56nC @ 10VInput Capacitance (ciss) @ Vds4500pF @ 20V
Power - Max94WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Transistor PolarityN Channel
Drain Source Voltage Vds40VOn Resistance Rds(on)3.2mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-252
Rohs CompliantYesConfigurationSingle
Resistance Drain-source Rds (on)0.0038 OhmsDrain-source Breakdown Voltage40 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current90 A
Power Dissipation94 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSP000391507
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