BSC200P03LS G Infineon Technologies, BSC200P03LS G Datasheet

BSC200P03LS G

Manufacturer Part Number

BSC200P03LS G

Description

MOSFET P-CH 30V 12.5A TDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSC200P03LS_G.pdf (9 pages)

Specifications of BSC200P03LS G

Package / Case

8-PowerTDFN

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 12.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

12.5A

Vgs(th) (max) @ Id

2.2V @ 100µA

Gate Charge (qg) @ Vgs

48.5nC @ 10V

Input Capacitance (ciss) @ Vds

2430pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

20 m Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 25 V

Continuous Drain Current

- 12.5 A

Power Dissipation

63 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package

SuperSO8

Vds (max)

-30.0 V

Rds (on) (max) (@10v)

20.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

BSC200P03LS G
BSC200P03LS GINTR
SP000359668

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