SPD30N03S2L-07 G Infineon Technologies, SPD30N03S2L-07 G Datasheet

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SPD30N03S2L-07 G

Manufacturer Part Number
SPD30N03S2L-07 G
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPD30N03S2L-07_G.pdf (9 pages)

Specifications of SPD30N03S2L-07 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 85µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
2530pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SPD30N03S2L-07G PG-TO252-3
OptiMOS
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R
•
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
° Pb-free lead plating; RoHS compliant
Type
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
Superior thermal resistance
=30A, V
=30 A , V
=25°C
=25°C
=25°C
.
DS
DD
=24V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
=25Ω
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
product (FOM)
=175°C
Marking
Page 1
2N03L07
jmax
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +175
55/175/56
SPD30N03S2L-07 G
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
120
250
136
30
30
13
6
PG-TO252-3
02-09-2008
6.7
30
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

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SPD30N03S2L-07 G Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 product (FOM) DS(on) Marking 2N03L07 Symbol puls jmax AR dv/dt =175°C jmax tot Page 1 SPD30N03S2L-07 G Product Summary 6.7 DS(on PG-TO252-3 Value 30 30 120 250 13 6 ±20 136 -55... +175 stg 55/175/56 02-09-2008 V mΩ A ...

Page 2

... PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 1.1K/W the chip is able to carry I thJC Page 2 SPD30N03S2L-07 G Values Unit min. typ. max. - 0.7 1.1 K 100 - - Values Unit min. typ. max ...

Page 3

... G V =15V, V =10V d(on =15A =3.6Ω d(off =24V, I =30A =24V, I =30A 10V GS V (plateau) V =24V, I =30A =25° =0V, I =30A =15V /dt=100A/µ Page 3 SPD30N03S2L-07 G Values Unit min. typ. max 1900 2530 pF - 740 990 - 180 270 Ω 120 - 0.9 1 02-09-2008 ...

Page 4

... Safe operating area parameter : °C C SPD30N03S2L- Drain current parameter: V SPD30N03S2L- °C 190 Max. transient thermal impedance thJC parameter : K 14.0µ 100 µ Page 4 SPD30N03S2L- ≥ 100 120 140 160 ) SPD30N03S2L- 0.50 single pulse - 02-09-2008 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. transfer characteristics ≥ parameter µ 0 Typ. drain-source on resistance R DS(on) parameter Ω 2 3 4 Typ. forward transconductance g = f(I DS(on)max fs parameter 2 Page 5 SPD30N03S2L- SPD30N03S2L- [ 3.2 3.4 3.6 3.8 4.5 10 =25° 02-09-2008 100 130 I D ...

Page 6

... Typ. gate threshold voltage V GS(th parameter: V 2.5 V 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPD30N03S2L- 1mA 85µ -60 - 100 ) µs p SPD30N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1 ...

Page 7

... D DD 260 mJ 220 200 180 160 140 . 120 100 105 15 Drain-source breakdown voltage (BR)DSS j parameter SPD30N03S2L- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD30N03S2L- Gate = 30 A pulsed D SPD30N03S2L-07 0 max 0 max 02-09-2008 Gate ...

Page 8

... Package outline: PG-TO252-3 Page 8 SSPD30N03S2L-07G 02-09-2008 ...

Page 9

... Page 9 SPD30N03S2L-07G 02-09-2008 ...

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