IPD042P03L3 G Infineon Technologies, IPD042P03L3 G Datasheet

IPD042P03L3 G

Manufacturer Part Number

IPD042P03L3 G

Description

MOSFET P-CH 30V 70A TO252-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPD042P03L3_G.pdf (9 pages)

Specifications of IPD042P03L3 G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.2 mOhm @ 70A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

70A

Vgs(th) (max) @ Id

1V @ 270µA

Gate Charge (qg) @ Vgs

175nC @ 10V

Input Capacitance (ciss) @ Vds

12400pF @ 15V

Power - Max

150W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0042 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

70 A

Power Dissipation

150 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Package

DPAK (TO-252)

Vds (max)

-30.0 V

Rds (on) (max) (@10v)

4.2 mOhm

Rds (on) (max) (@4.5v)

6.8 mOhm

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000473922

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