BUZ32 Infineon Technologies, BUZ32 Datasheet

BUZ32

Manufacturer Part Number

BUZ32

Description

MOSFET N-CH 200V 9.5A TO220AB

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BUZ32.pdf (10 pages)

Specifications of BUZ32

Package / Case

TO-220AB

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

9.5A

Vgs(th) (max) @ Id

4V @ 1mA

Input Capacitance (ciss) @ Vds

530pF @ 25V

Power - Max

75W

Mounting Type

Through Hole

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.4 Ohm @ 10 V

Drain-source Breakdown Voltage

200 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

9.5 A

Power Dissipation

75000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

BUZ32
BUZ32IN
BUZ32X
BUZ32XK
SP000011345

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Price

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Manufacturer:

Current page: 1 of 10
Download datasheet (2Mb)

SIPMOS

Rev. 2.3

• N channel

• Enhancement mode

• Avalanche-rated

Type

BUZ 32

Maximum Ratings

Parameter

Continuous drain current

Pulsed drain current

Avalanche current,limited by T

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

L = 2 mH, T

Gate source voltage

Power dissipation

Operating temperature

Storage temperature

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

= 9.5 A, V

= 29 ˚C

= 25 ˚C

Power Transistor

= 25 ˚C

= 50 V, R

200 V

= 25

9.5 A

jmax

Ω

jmax

0.4

DS(on

Ω

)

Page 1

Symbol

Dpuls

stg

tot

thJC

thJA

Package

PG-TO-220-3

Pin 1

55 / 150 / 56

-55 ... + 150

Values

≤

120

Pb-free

Yes

9.5

6.5

1.67

Pin 2

2009-04-08

BUZ 32

˚C

K/W

Unit

Pin 3

Related parts for BUZ32

BUZ32 Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 200 V 9.5 A Maximum Ratings Parameter Continuous drain current ˚C C Pulsed drain current ˚C ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA ˚ Gate threshold voltage DS, D ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ DS(on)max, D Input capacitance MHz GS DS ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C C Inverse diode direct current,pulsed ˚C C Inverse diode forward voltage ...