IPI26CN10N G Infineon Technologies, IPI26CN10N G Datasheet
IPI26CN10N G
Manufacturer Part Number
IPI26CN10N G
Description
MOSFET N-CH 100V 35A TO262-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Specifications of IPI26CN10N G
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 39µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
2070pF @ 50V
Power - Max
71W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.026 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
71000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Drain Source Voltage Vds
100V
On Resistance Rds(on)
20mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-262
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000208932
SP000680726
SP000680726
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IPI26CN10N G Summary of contents
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