IPD082N10N3 G Infineon Technologies, IPD082N10N3 G Datasheet
IPD082N10N3 G
Manufacturer Part Number
IPD082N10N3 G
Description
MOSFET N-CH 100V 80A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD082N10N3_G.pdf
(12 pages)
Specifications of IPD082N10N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.2 mOhm @ 73A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3.5V @ 75µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3980pF @ 50V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000485986
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