IPD053N08N3 G

Manufacturer Part NumberIPD053N08N3 G
DescriptionMOSFET N-CH 80V 90A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD053N08N3 G datasheet
 


Specifications of IPD053N08N3 G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5.3 mOhm @ 90A, 10VDrain To Source Voltage (vdss)80V
Current - Continuous Drain (id) @ 25° C90AVgs(th) (max) @ Id3.5V @ 90µA
Gate Charge (qg) @ Vgs69nC @ 10VInput Capacitance (ciss) @ Vds4750pF @ 40V
Power - Max150WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Transistor PolarityN Channel
Drain Source Voltage Vds80VOn Resistance Rds(on)4.4mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-252
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000395183  
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IPD053N08N3 G Summary of contents