IPD035N06L3 G

Manufacturer Part NumberIPD035N06L3 G
DescriptionMOSFET N-CH 60V 90A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD035N06L3 G datasheet
 


Specifications of IPD035N06L3 G

Package / CaseDPak, TO-252 (2 leads+tab), SC-63Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs3.5 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)60VCurrent - Continuous Drain (id) @ 25° C90A
Vgs(th) (max) @ Id2.2V @ 93µAGate Charge (qg) @ Vgs79nC @ 4.5V
Input Capacitance (ciss) @ Vds13000pF @ 30VPower - Max167W
Mounting TypeSurface MountMinimum Operating Temperature- 55 C
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.0035 Ohm @ 10 VDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current90 A
Power Dissipation167000 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTDrain Source Voltage Vds60V
On Resistance Rds(on)2.7mohmRds(on) Test Voltage Vgs10V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-252
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000398066  
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